1 item symbol ratings unit remarks drain-source voltage v ds 100 v dsx 70 continuous drain current i d 73 6.9 *4 pulsed drain current i d(puls] 292 gate-source voltage v gs 30 repetitive or non-repetitive i ar *2 73 maximum avalanche energy e as *1 319.2 maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d 2.4 *4 270 operating and storage t ch +150 temperature range t stg electrical characteristics att c =25c ( unless otherwise specified) thermalcharacteristics 2sk3589-01 fuji power mosfet 200303 n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications for switching absolute maximum ratings at tc=25c ( unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =100v v gs =0v v ds =80v v gs =0v v gs =30v i d =25a v gs =10v i d =25a v ds =25v v cc =48v i d =25a v gs =10v r gs =10 ? min. typ. max. units v v a na m ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient r th(ch-a) *4 channel to ambient 0.463 87.0 52.0 c/w c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r t d(off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d =250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mhz v cc =50v i d =50a v gs =10v l=71.5 h t ch =25c i f =50a v gs =0v t ch =25c i f =50a v gs =0v -di/dt=100a/s t ch =25c v v a a a v a mj kv/s kv/s w w c c 100 3.0 5.0 25 250 10 100 19 25 15 30 1830 2745 460 690 38 57 20 30 35 53 50 75 23 35 52 78 16 24 18 27 73 1.10 1.65 0.1 0.4 -55 to +150 outline drawings [mm] equivalent circuit schematic super f ap-g series foot print pattern (1) gate(g) (3) source(s) [power line] (4) drain(d) (2) source(s) [signal line] v gs =30v ta=25c v ds 100v ta=25c = < *4 surface mounted on 1000mm 2 , t=1.6mm fr-4 pcb(drain pad area:500mm 2 ) *3 i f -i d , -di/dt=50a/s, vcc bv dss , tch 150c = < = < = < *1 l=71.9h, vcc=48v, see to avalanche energy graph *2 tch 150c = <
2 characteristics 2sk3589-01 fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=25v,tch=25c rds(on)=f(id):80s pulse test, tch=25c 024681012 0 40 80 120 160 200 20v 7.0v 10v 8v 6.5v 7.5v 6.0v id [a] vds [v] typical output characteristics vgs=5.5v 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance 0 40 80 120 160 200 0.00 0.03 0.06 0.09 0.12 0.15 7.0v 6.5v rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 8v 7.5v 6.0v vgs= 5.5v 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 25 50 75 100 125 150 0 1 2 3 4 5 surface mounted on 1000mm2,t=1.6mm fr-4 pcb (drain pad area : 500mm2) allowable power dissipation pd=f(tc) pd [w] tc [ c]
3 2sk3589-01 fuji power mosfet vgs=f(qg):id=50a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=48v, vgs=10v, rg=10 ? -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 rds(on) [ m ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=25a,vgs=10v -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250 vgs(th) [v] tch [ c] a 0 20406080 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs [v] vcc= 50v 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 c [nf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] id [a]
4 2sk3589-01 fuji power mosfet http://www.fujielectric.co.jp/denshi/scd 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [ c/w] t [sec] 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 800 i as =30a i as =73a i as =44a e as [mj] starting tch [ c] maximum avalanche energy vs. starting tch e as =f(starting tch):vcc=48v 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=48v avalanche current i av [a] t av [sec]
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